Si基外延GaN中位错的光助湿法化学显示  

Light-Assisted Wet Etching of Dislocations in GaN Grown on Silicon

作　　者：赵丽伟[1] 刘彩池[1] 滕晓云[1] 郝秋艳[1] 朱军山[1] 孙世龙[1] 王海云[1] 徐岳生[1] 冯玉春[2] 郭宝平[2] 

机构地区：[1]河北工业大学材料学院信息功能材料研究所,天津300130 [2]深圳大学光电子学研究所,深圳518060

出　　处：《Journal of Semiconductors》2006年第6期1046-1050,共5页半导体学报（英文版）

基　　金：教育部新世纪优秀人才支持计划;河北省自然科学基金(批准号:E2005000042)资助项目~~

摘　　要：采用1000W卤钨灯作为光源,对GaN外延膜在KOH溶液中进行化学腐蚀,以显示晶体位错.采用扫描电子显微镜、原子力显微镜观察位错密度及表面形貌,得到了清晰的腐蚀图形.提出了腐蚀机理,光照激发位错处产生电子空穴对,加速位错处的腐蚀速率.GaN表面出现了大量的六角腐蚀坑(位错露头).优化了KOH溶液的腐蚀条件.A new method for the light-assisted wet etching of GaN is demonstrated,the light source for which is a tungsten halide lamp. The dislocation density and surface morphology are investigated by scanning electron microscopy and atomic force microscopy,and an optimal etching morphology is obtained. It is also demonstrated that the light source induces electron-hole pairs and enhances the etching rate at the dislocation sites. Many hexagonal etching pits, which emergence at the dislocations, are observed. The etching mechanism is discussed, and an optimal etching condition is proposed.

关 键 词：GAN 湿法化学腐蚀 六角腐蚀坑 

分 类 号：TN304.05[电子电信—物理电子学]