局域寿命控制NPT-IGBT瞬态模型  

A Dynamic-State Model of an NPT-IGBT with Localized Lifetime Control

作　　者：方健[1] 吴超[1] 乔明[1] 张波[1] 李肇基[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《Journal of Semiconductors》2006年第6期1078-1083,共6页半导体学报（英文版）

基　　金：国家军事电子预研(批准号:41308020405);武器装备预研基金(批准号:51408030404DZ0215)资助项目~~

摘　　要：提出了局域寿命控制下NPT IGBT的瞬态模型,并与数值分析结果进行了对比,验证了模型的正确性.该模型采用了准静态近似,将关断过程分为快速下降阶段和缓慢下降阶段分别加以求解而得到.基于该模型,详细讨论了局域低寿命区参数对关断时间的影响.该模型将有助于理解局域寿命控制NPT IGBT的关断过程物理图像,同时也可以用于指导该类器件的设计和优化.文中所采用的分析方法具有一定的普适性,其他类似结构和器件亦可采用此方法进行分析.A novel dynamic-state model of an NPT-IGBT with localized lifetime control is proposed and is verified by the 2D simulator MEDICI. In this model, the quasi-static-state approximation is used, and the turn-off stage is divided into two stages, including a fast turn-off and a slow turn-off, to characterize the turn-off. With this model,the dynamic characteristics of a localized lifetime control NPT-IGBT, as influenced by the parameters of the localized low-lifetime region, are discussed in detail. This model is helpful for understanding the physical mechanisms in an NPT-IGBT with localized lifetime control during the turn-off period and can be used to the direct design and optimization of an NPT-IGBT. The modeling and analysis methods used here are universal and also can be used in other conductivity modulation power devices.

关 键 词：局域寿命控制 NPT-IGBT 关断时间 电导调制 

分 类 号：TN386[电子电信—物理电子学]