硼/氢掺杂金刚石薄膜导电特性研究  

Study of Electrical Conductivity in Boron/Hydrogen-Doped Diamond Film

作　　者：刘东红[1] 闫翠霞[1] 俞琳[1] 胡连军[1] 龙闰[1] 戴瑛[1] 

机构地区：[1]山东大学物理与微电子学院国家晶体材料重点实验室,济南250100

出　　处：《半导体技术》2006年第7期495-497,共3页Semiconductor Technology

基　　金：国家自然科学基金资助项目(10374060);山东省自然科学基金资助项目(Y2003A01)

摘　　要：金刚石是非常理想的功能器件材料,由于室温下金刚石缺少浅施主态,已成为金刚石作为电子器件材料的主要障碍之一。最近报道显示,硼掺杂同质外延金刚石层暴露在氘离子束中能形成浅施主态的n型电导。研究了CVD合成类Ⅰb型金刚石薄膜,通过硼、氢离子注入掺杂及退火温度对金刚石薄膜导电特性的影响。Diamond is a kind of ideal material of functional apparatus. The absence of a shallow donor in diamond with reasonably room temperature was one of the key obstacles for making diamond-based semiconductor devices. Recent report showed that exposure of p-type （B doped） homoepitaxial diamond layers to deuterium plasma can form n-type diamond with a shallow donor state. The effects of B and H ion injection and changing anneal temperature on the conductivity of diamond film （ I b） by CVD were investigated.

关 键 词：金刚石 掺杂 离子注入 喇曼光谱 

分 类 号：TN305.3[电子电信—物理电子学] O474[理学—半导体物理]