多源感应耦合等离子体的产生及等离子体诊断  

Generation of multi-source inductively coupled plasma and its diagnostics

作　　者：辛煜[1] 狄小莲[1] 虞一青[1] 宁兆元[1] 

机构地区：[1]苏州大学物理科学与技术学院,江苏省薄膜材料重点实验室,苏州215006

出　　处：《物理学报》2006年第7期3494-3500,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10305008)资助的课题.~~

摘　　要：基于单组多匝线圈的小腔体感应耦合等离子体,研究了线圈配置与耦合效率等之间的关联,并将实验结果应用到多组并联螺旋天线感应耦合等离子体放电体系中.采用了改进的朗谬尔探针方法对单源和多源感应耦合等离子体的电参量分别进行了表征.结果表明,使用多螺旋天线并联方式可以产生低气压高密度的感应耦合等离子体放电,通过调整工艺参量,可以将等离子体密度和光刻胶的刻蚀均匀性控制在80%以上.In recent years, in order to cut down the production cost, substrates with large area are used in semiconductor industry, especially in the field of thin from transistor display. Obviously, the key point for the substrate fabrication needs a uniform plasma sources with large area. Among them, inductively couple plasma is one of the good candidates. In our experiments, based on a small chamber of inductively coupled plasma with a single multi-turn coil, we investigated the relationship between coil configuration and power coupling efficiency, and applied these experimental results to the generation of large-area inductively coupled plasma with parallel-connected multi-sources. By using Langmuir probe measurement, plasma parameters of this kind of large area ICP were characterized. It was shown that the large-area ICP source with parallel-connected multi-sources can produce a plasma density lager than 10^10cm^-3 under a rather low pressure （ 〈 10Pa）. The uniformity of plasma density and the photoresist etching can he controlled to a level better than 80% by adjusting the process parameters.

关 键 词：多源感应耦合等离子体 朗谬尔探针 等离子体灰化 

分 类 号：O531[理学—等离子体物理]