离子束增强沉积制备p型氧化锌薄膜及其机理研究  

Preparation and mechanism of p-type ZnO films formed by modified ion beam enhanced deposition method

作　　者：袁宁一[1] 李金华[1] 范利宁[1] 王秀琴[1] 谢建生[1] 

机构地区：[1]江苏工业学院功能材料实验室,常州213016

出　　处：《物理学报》2006年第7期3581-3584,共4页Acta Physica Sinica

摘　　要：采用离子束增强沉积方法在Si和SiO2/Si衬底上制备In-N共掺杂ZnO薄膜(INZO),溅射靶是用ZnO和2atm%In2O3粉体均匀混合并压制而成,在氩离子溅射ZnO靶的同时,氮、氩混合离子束垂直注入沉积的薄膜.实验结果显示INZO薄膜具有(002)的择优取向,并且为p型导电,电阻率最低为0.9Ωcm.薄膜在氮气、氧气气氛下退火,对薄膜的结构和电学特性与成膜和退火条件的关系进行了分析.In-N codoped ZnO films were prepared on Si and SiO2/Si substrates by modified ion beam enhanced deposition method. ZnO mixed with 2 atm % In2O3 powder was used as sputtering target and during the deposition N^＋/Ar^＋ mixed beam was implanted into the deposited films. The XRD results showed that all polycrystaUine In-N codoped ZnO films deposited on Si and Si02 substrates have a preferred （002） orientation and showed p-type conduction. The as-deposited films were annealed in N2 and O2 After annealed in N2 the lowest resistivity of p-type In-N codoped ZnO films was 0.9Ωcm. The dependence of film structure and electrical properties on deposition and annealing condition were discussed.

关 键 词：氧化锌薄膜 P型掺杂 离子束增强沉积 

分 类 号：O484.1[理学—固体物理]