一种新型GaAs／GaAlAs红外探测器的研究  

The Study of a New Type of GaAs/GaAlAs Infrared Detector

作　　者：杜春霞[1] 邓军[1] 李群[1] 孔锐[1] 王东凤[1] 沈光地[1] 尹洁[1] 

机构地区：[1]北京工业大学和北京市光电子技术实验室,北京华北光电技术研究所红外室

出　　处：《北京工业大学学报》1996年第4期1-6,共6页Journal of Beijing University of Technology

基　　金：国家自然科学基金;北京市科委高技术项目;北京市自然科学基金

摘　　要：首次应用一种新的物理构想和工作机制设计了新型的ＧａＡｓ／ＧａＡｌＡｓ红外探测器，并进行了理论计算、器件研制和测试分析。结果表明，这种新型探测器与常规ＧａＡｓ／ＧａＡｌＡｓ量子阱红外探测器相比，具有一些新的特点。理论计算和实验结果得到了很好的一致性。给出了这种新型器件电流输运的计算方法；得到较低的暗电流，较宽的光吸收谱（５～１０μｍ）；得到了新型器件的红外辐射下的光电流响应；初步给出了新型器件工作点的选取方法；模拟计算表明，增加周期个数，将会得到更大的光电流响应。A new type of GaAs/GaAlAs quantum well infrared photodetectors based on a new physics mechanism was designed. Its calculation, manufacture,experiment mesurments and analysis were performed. Some new important characteristics are obtained, The calculated results are consistent with the experiments, which is better than results from the conventional GaAs/GaAlAs quantum well infrared photodetector. The simulation method of this new device about the current transport is given. The features of the large absorption band-width (5～10μm) and the low dark current are achieved.The device photo-electric response under the incident infrared radiation are observed for the first time. The choice of suitable operation bias is given preliminarily. It is estimated that the optical-induced signal will be increasing upon the increasing number of period.

关 键 词：红外探测器 低暗电流 砷化镓 GAALAS 量子阱 

分 类 号：TN215[电子电信—物理电子学]