SiGe／Si　HBT的直流特性分析  

An Analysis of SiGe/Si HBT's DC Characteristics

作　　者：张时明[1] 邹德恕[1] 陈建新[1] 高国[1] 杜金玉[1] 韩金茹[1] 董欣[1] 袁颍 王东凤[1] 沈光地[1] 倪卫新 汉森 

机构地区：[1]北京工业大学,北京市光电子技术实验室,瑞典林雪平大学物理系

出　　处：《北京工业大学学报》1996年第4期20-24,共5页Journal of Beijing University of Technology

基　　金：国家自然科学基金;国家科委"八六三计划";北京市科委高技术资助

摘　　要：应用＂掺杂工程＂和＂带隙工程＂各自的特点，设计了一种独特的基区双向高速输运的ＳｉＧｅ／Ｓｉ　ＨＢＴ层结构，并利用此结构在３μｍ工艺线上做出了性能良好的ＳｉＧｅ／Ｓｉ　ＨＢＴ。其主要直流参数为：室温共发射极最大电流增益βｍａｘ（３００Ｋ）可达３００，低温βｍａｘ（７７Ｋ）可达８０００，厄利电压３００Ｖ，漏电流在ｎＡ量级，均为国际先进水平。同时，给出了ＳｉＧｅ／ＳｉＨＢＴ的室温（大注入，小注入），低温（大注入，小注入）的输出特性曲线，进行了对比分析，详细讨论了影响室温β，低温β及其它直流参数的主要因素。The SiGe/Si HBT's layer structure with a novel high speed base transportation was designed upon considering both doping engineering and band engineering, On this structure, the SiGe/Si HBT with advanced performance was fabricated in 3μm processing line. Its main DC characteristics are shown as follows: The maximum current gain βmax (at room temperature) is up to 300; the maximum current gain βmax (at 77K)is 8000; the early voltage is 300V and the leakage current is at nA level. Furthermore,the output characteristics at room temperature (small injection and large injection) and at 77K (small injection and large injection)are shown, and the main factors which influence the current gain are discussed.

关 键 词：异质结构 硅锗合金 掺杂工程 硅 直流特性 

分 类 号：O472.4[理学—半导体物理]