双极晶体管h_（FE）低温失效分析及使用可靠性  

The Analysis of Bipolar Transistor h_(FE) Feilure Under Low Temperature and Its Reliability in Application

作　　者：李志国[1] 程尧海[1] 孙英华[1] 郭伟玲[1] 李学信[1] 李志勇[1] 戴慈壮 

机构地区：[1]北京工业大学电子工程学系,北京航空航天大学工程系统工程系

出　　处：《北京工业大学学报》1996年第4期25-30,共6页Journal of Beijing University of Technology

摘　　要：论述了影响双极晶体管电流增益ｈ_（ＦＥ）低温下降的重掺杂效应，结合具体器件测试并计算出了ｈ_（ＦＥ）的低温下降值，对实测值与计算值的差异进行了分析。最后指出了改进ｈ_ＦＥ温度特性的具体途径。The effect of heavy doping on common emitter direct-current foreward currentgain(hFE) of bipolar transistor was investigated. hFE under low temperature was measured and calculated. And the difference between the hFE measured and the calculated were analysed. The method to improve hFE temperature dependences is pointed out based on the above work.

关 键 词：电流增益 低温 失效 可靠性 双极晶体管 

分 类 号：TN322.8[电子电信—物理电子学]