液相外延制备InGaAsP／InP掩埋异质结若干工艺问题的讨论  

STUDY ON SOME KEY TECHNOLOGIES FOR In GaAsP/InP BURIED HETEROSTRUCTURE FORMED BY LIQUID PHASE EPITAXY

作　　者：桑文斌[1] 钱永彪[1] 闵嘉华[1] 莫要武[1] 陈培峰[1] 王林军[1] 吴汶海[1] 陈高庭[1] 

机构地区：[1]上海大学(嘉定校区),中国科学院上海光机所

出　　处：《光子学报》1996年第10期893-897,共5页Acta Photonica Sinica

摘　　要：本文对ＩｎＧａＡｓＰ／ＩｎＰ（ＤＣ－ＰＢＨ）激光器掩埋异质结液相外延生长中的几个关键工艺问题进行了研究，提出了获得有利于沟道掩埋生长的理想沟道几何图形的新的腐蚀配方（Ｂｒ＿２／ＨＢｒ），对二次外延再生长光刻腐蚀面损伤层和有害杂质的去除采用了阳极氧化工艺，同时探索了利用二次外延过程中Ｚｎ扩散来控制限制层（３）掺杂的新方法，在研究基础上制造了重现性好且性能良好的１．３μｍ激光二极管，室温时，阈值电流最低小于２５ｍＡ，典型值为３０ｍＡ，在６０ｍＡ直流电流的驱动下，光输出功率高达１２．５ｍＷ。Some key points for LPE growth of InGaAsP/InP buried heterostructure are investigated in thispaper. A new etchant-Br2/HBr system was put forward to obtain an ideal double channel geometry shape suitable to the growth of the BH structure. Anodization and etching procedures were adopted to remove effectively the damaged surface layer and poison impurities due to unequal dissolution rates of the crystal components by the photolithographic etchants. In addition,the novel processing procedure for controlling the axial p-n junction position by Zn diffsion during the 2 nd step LPE was also explored.The good performance of 1.3μm LD has been achieved with threshold current minimum of 25mA,typically 30mA and light output power up to 12.5mW driven by 60mA d-c current at room temperature.

关 键 词：LPE 掩埋异质结 激光二极管 INGAASP 磷化铟 

分 类 号：TN244[电子电信—物理电子学]