势垒区δ掺杂量子阱Ge03Si07／Si／Ge03Si07的子带间跃迁光吸收系数  

INTERSUBBAND ABSORPTION COEFFICIENTS IN A QUANTUM WELL Ge 0 3 Si 0 7 /Si/Ge 0 3 Si 0 7 WITH BARRIER δ DOPING

作　　者：徐至中[1] 

机构地区：[1]复旦大学物理系

出　　处：《物理学报》1996年第10期1762-1770,共9页Acta Physica Sinica

基　　金：国家自然科学基金

摘　　要：采用包络函数方法对生长在Ｇｅ０３Ｓｉ０７（００１）衬底上势垒区δ掺杂量子阱Ｇｅ０３Ｓｉ０７／Ｓｉ／Ｇｅ０３Ｓｉ０７的电子能带结构及子带间光吸收特性进行了自洽的计算．对光吸收系数与量子阱的阱宽、δ掺杂位置及δ掺杂密度间的变化关系进行了讨论．The electronic structures and intersubband absorption coefficients of Ge 0 3 Si 0 7 /Si/ Ge 0 3 Si 0 7 quantum wells with barrier δ doping grown on Ge 0 3 Si 0 7 (001) substrates are consistently calculated in the envelopefunction approach. The dependences of the absorptivities on the well widths, δ doping position and δ doping concentration are discussed. At last, the frequency shift caused by the depolarization effects of highly dense two dimensional electrons are studied.

关 键 词：红外材料 Δ掺杂 量子阱 子带间跃迁 

分 类 号：TN213[电子电信—物理电子学] O471.5[理学—半导体物理]