H_2稀释在PECVD法制备微晶硅薄膜中的影响  

Influence of H_2 dilution on microcry stalline silicon thin film prepared by PECVD

作　　者：王生钊[1] 卢景霄[1] 王红娟[1] 刘萍[1] 陈永生[1] 张丽伟[1] 杨仕娥[1] 郜小勇[1] 

机构地区：[1]郑州大学教育部材料物理重点实验室,河南郑州450052

出　　处：《可再生能源》2006年第4期18-20,共3页Renewable Energy Resources

摘　　要：利用等离子增强化学气相沉积(PECVD)技术,研究了H稀释度D=H 2/(H 2+SiH 4)对在玻璃和不锈钢衬底上低温制备微晶硅薄膜的晶化率、晶粒尺寸、薄膜质量等的影响。结果表明,随着硅烷浓度的降低,样品的晶化率、晶粒尺寸有所改变。当D=99%时,晶粒突然变大,晶化率显著提高。因此,我们认为此时的硅薄膜由非晶硅转化为微晶硅。By PECVD deposition technology, we mainly investigated the influence of hydrogen dilution on glass/steel-based intrinsic amorphous/microcrystalline silicon thin film prepared at 300 ℃.We study the crystallization ratio, grain size of the Silicon thin film specially. The results reveal that the crystallization ratio ,grain size of the Silicon thin film changed along with D, which changed sharply when the D=99%.On this We think the Si thin film changed from a-Si into u-Si.

关 键 词：PECVD 氢稀释 微晶硅薄膜 

分 类 号：TM914.42[电气工程—电力电子与电力传动]