键合技术在微机械Golay-cell红外探测器中的应用  

Application of the wafer bonding technology in micromachined golay-cell infrared detector

作　　者：赵林林[1] 徐晨[1] 赵慧[1] 霍文晓[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院北京市光电子技术实验室,北京100022

出　　处：《仪器仪表学报》2006年第8期936-939,共4页Chinese Journal of Scientific Instrument

基　　金：北京市教委(KM200310005009)资助项目

摘　　要：介绍多种硅片键合技术及其在基于高莱盒(Golay-cell)原理的微机械红外探测器中的应用。对多种键合方法在该器件中的实验结果进行比较,确定了现阶段最优的键合方法,即采用局部电场屏蔽方法的阳极键合方法,键合成功率在90%以上,并初步实现了器件的标准化制作。This paper introduces different kinds of silicon bonding technologies and their application in micromachined infrared detector based on Golay-cell structure. The experiment results for different bonding technologies used in the detector device were compared, and an optimum bonding method was found, which is the local electrostatic shield anodic bonding technology. The successful bonding probability is 90% above. A standardized process is initially used in the detector fabrication.

关 键 词：微电子机械系统 高菜盒 红外探测器 键合 

分 类 号：TN305[电子电信—物理电子学]