快速热退火提高应变InAs／InP量子阱结构的晶体质量  

Enhancement of crystalline quality of strained InAs/InP quantum well structures by rapid thermal annealing

作　　者：邢启江[1] 章蓓[1] 王舒民[1] 

机构地区：[1]北京大学

出　　处：《半导体光电》1996年第4期357-361,共5页Semiconductor Optoelectronics

摘　　要：研究了快速热退火对应变ＩｎＡＳ／ＩｎＰ单量子阱（ＳＱＷ）结构光学性质的影响。样品经最佳条件７００℃ｔ，５ｓ的快速热退火，８Ｋ温度下量子阱的荧光强度增加了４倍，量子阱荧光峰仅蓝移１．５５ｍｅＶ。而且，发现在样品中的深辐射能级的荧光效率也受到快速热退火的影响。实验结果证明快速热退火能大大改进生长以后的应变量子阱结构的晶体质量，而且是提高激光器件特性的一个重要途径。The efect of rapid thermal annealing on the optical properties of a strained InAs/InP single quantum well(SQW)structure has been investigated in this paper.The luminescent intensity of the quantum well at 8K was increased by a factor of 4 and 1.55 meV blue shift of the quantum well photoluminescence peak was observed after annealing at the optimal condition of 700℃ for 5 s.Furthermore,we found that the luminescence efficiency of the deep radiative levels in the samples were also affected by rapid thermal annealing.Our experimental results have demonstrated that rapid thermal annealing significantly improves the crystalline quality of strained quantum well structures after grown and is an important way for enhancement of the laser device performances.

关 键 词：半导体 量子阱结构 快速热退火 火荧光 晶体质量 

分 类 号：TN304.05[电子电信—物理电子学]