SiSiC陶瓷衬底上多晶硅薄膜的结构  

THE POLYCRYSTALLINE SILICON THIN-FILM ON SiSiC CERAMIC SUBSTRATE

作　　者：马丽芬[1] 许颖[1] 任丙彦[2] 勾宪芳[2] 王文静[1] 万之坚[3] 李海峰[3] 

机构地区：[1]北京市太阳能研究所,北京100083 [2]河北工业大学信息功能材料研究所,天津300130 [3]清华大学新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《太阳能学报》2006年第9期915-918,共4页Acta Energiae Solaris Sinica

基　　金：国家重点基础研究发展规划(G2000028208);国家自然科学基金(60276032);北京市自然科学基金重点项目(2021010)

摘　　要：采用快速热化学气相沉积(RTCVD)法在Si-SiC陶瓷衬底上直接沉积多晶硅薄膜的研究,属国内首次。采用SEM和XRD两种测试方法分析了沉积外延的表面形貌和薄膜晶向,实验发现在RTCVD工艺中生长的多晶硅薄膜结构致密、晶粒较大,为制备低成本的陶瓷衬底多晶硅薄膜太阳电池奠定了基础。Two type of Si-SiC complex ceramic substrates with good thermodynamic and crystal match with polycrystalline silicon thin film were prepared in our experiment. The substrates were defined as type Ⅰ and type Ⅱ according to higher and lower process temperature, respectively. The pelycrystalline silicon thin-films were fabricated by means of rapid thermal CVD （RTCVD） on the substrates above 1100℃ using SiH2Cl2 and B2H6 as the source gas. The orientation is measured by XRD, and SEM analyzes the pattern. The grain size of the thin film on substrates made on high larger than one on substrafe Ⅱ . All analysis show that the SiSiC substrates made on high temperature process are suitable for fabricating the pelycrystalline silicon thin film.

关 键 词：RTCVD SiSiC 多晶硅 薄膜 

分 类 号：TK514[动力工程及工程热物理—热能工程]