总剂量辐照前后CMOS器件阈电压变化的统计分析  

Statistical analysis of threshold voltage changes of CMOS devices before and after total dose irradiation

作　　者：李爱武[1] 余学峰[1] 任迪远[1] 汪东[1] 匡治兵[1] 刘刚[1] 

机构地区：[1]中国科学院新疆理化技术研究所

出　　处：《核技术》2006年第9期665-669,共5页Nuclear Techniques

摘　　要：本文采用统计分析的方法对大样本互补型金属-氧化物-半导体器件(CMOS)CC4069电路辐照前后的数据进行了处理。比较了研究变量的晶体管阈电压值在辐照前和累积一定辐照剂量后的标准差及统计分布,研究了样品阈电压漂移值的分布规律,由此对应用于航天系统的电子元器件进行有关辐射可靠性筛选的必要性进行了探讨。The statistical method has been applied to analyze the data of a large number samples of CMOS CC4069 circuits before and after irradiation. The standard deviation and statistical distribution of the threshold voltage of the transistors before and after irradiation were compared, and the distribution characteristics of the threshold voltage shift of the samples were studied. Furthermore, the necessity of selecting electronic devices, used in spaceflight systems to ensure their reliability, is discussed.

关 键 词：互补型金属-氧化物-半导体(CMOS)器件 总剂量辐照 阈电压 统计 

分 类 号：TN432[电子电信—微电子学与固体电子学]