SrMnO_3阻挡层对La_(0.8)Sr_(0.2)MnO_3/Si异质结整流特性的改善  

Improvement of rectifying properties of LSMO/Si heterojunction by SrMnO_3 barrier layer

作　　者：李彤[1] 李驰平[1] 王波[1] 宋雪梅[1] 张铭[1] 严辉[1] 

机构地区：[1]北京工业大学材料科学与工程学院,北京100022

出　　处：《功能材料与器件学报》2006年第5期413-417,共5页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(5050200160576012);科技部重大基础前期专项(2002CCC01300);北京市科技新星计划(2004A10);北京市优秀人才工程(20041D0501513)

摘　　要：对用磁控溅射方法在硅基上直接沉积La0.8Sr0.2MnO3和引入SrMnO3(SMO)阻挡层后沉积La0.8Sr0.2MnO3进行了比较。对薄膜结构用X射线衍射试验表征,并分析了薄膜取向生长的原因。卢瑟福背散射实验结果表明,SMO阻挡层的引入显著地削弱了LSMO和Si界面层处的元素互扩散。电学测试表明LSMO/SMO/Si结构比LSMO/Si结构具有更好的p-n结整流特性,而且随SMO缓冲层的增厚,整流特性反而削弱。The rectifying properties of Lao8 Sro2 MnO3 （LSMO）/Si with SrMnO3 （SMO） as barrier layer were compared with the one without SMO, prepared by using RF magnetron sputtering on Silicon substrate. The X - ray diffraction was used to study the structures of the films and the reason of preferential orientation of the films was investigated subsequently. RBS measurement shows the interdiffusion between LSMO and Si is dramatically impaired through introducing SMO barrier layer. Consequently, the rectif- ying properties of LSMO/SMO/Si is improved compared with LSMO/Si obviously. But thicker intermediate layer results in the weakening of rectifying properties.

关 键 词：P—n结 阻挡层 择优取向 整流特性 

分 类 号：O471.5[理学—半导体物理] O472.4[理学—物理]