纳米级MOSFET隧穿栅电流量子模型  

Quantum Modeling of Gate Tunneling Current for Nanoscale MOSFETs

作　　者：王伟[1] 孙建平 顾宁[1] 

机构地区：[1]东南大学分子与生物分子电子学教育部重点实验室 [2]密执安大学电气工程与计算机科学系

出　　处：《微电子学》2006年第5期622-625,629,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60371037;20573019)

摘　　要：运用一种全量子模型,研究高k栅介质纳米MOSFET(场效应管)栅电流,特别适用于各种材料高k栅介质和高k叠栅介质纳米MOSFET。使用该方法,研究了高k栅介质中氮含量等元素对栅极电流的影响,并对模拟结果进行了分析比较。结果显示,为了最大限度减少MOS器件的栅泄漏电流,需要优化介质中的氮含量。通过对比表明,模型与实验结果符合。A quantum model is developed to investigate the device behavior related to gate tunneling current for nanoscale MOSFETs with high-k gate stacks. The present model is capable of modeling various MOS device structures with combinations of high-k dielectric materials and multilayer gate stacks. Effects of nitrogen content on the gate tunneling current were studied theoretically. Comparison and analysis are made for gate current behavior between modeling and experimental results. Our comprehensive studies on the high-k structures indicate that the reduction of the gate tunneling current can be optimized in terms of the nitrogen content. The results presented in the paper are consistent with experimental data.

关 键 词：MOSFET 高k介质 栅电流 量子模型 

分 类 号：TN386[电子电信—物理电子学]