三端1．3μmInGaAsP／InP双区共腔激光器  

Three-terminal 1. 3μm InGaAsP/InP Two-section Lasers

作　　者：张权生[1] 石志文[1] 杜云[1] 赵军[1] 颜学进[1] 

机构地区：[1]中国科学院半导体研究所集成光电子学国家重点实验室

出　　处：《高技术通讯》1996年第7期27-29,共3页Chinese High Technology Letters

基　　金：国家自然科学基金

摘　　要：研制成功了弱调Ｑ及强调Ｑ两种三端１．３μｍＩｎＧａＡｓＰ／ＩｎＰ双区共腔激光器，其Ｐ／Ｉ特性分别呈二极管激射特性和吸收型双稳特性。两种激光器均实现了室温连续（直流）工作，吸收区电极的设置使两种器件的Ｐ／Ｉ特性均获得了大范围调节。Two kinds of 1. 3μm InGaAsP/InP common-cavity two-section lasers behaving the weak and strong Q-switching effect have been developed. The P/I curves of the two lasers display the lasing characteristics and bistabilities, respectively. The CW operation of the two lasers at room temperature has been realized and their P/I characteristics have been regulated in a wide range by the absorption region current.

关 键 词：激光器 双区共腔激光器 电极 磷化铟 INGAASP 

分 类 号：TN248[电子电信—物理电子学]