长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备  

Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers

作　　者：潘教青[1] 赵谦[1] 朱洪亮[1] 赵玲娟[1] 丁颖[1] 王宝军[1] 周帆[1] 王鲁峰[1] 王圩[1] 

机构地区：[1]中国科学院半导体研究所光电子研究发展中心,北京100083

出　　处：《物理学报》2006年第10期5216-5220,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60176023)资助的课题.~~

摘　　要：采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1·6—1·7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1·66μm和1·74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1·74μm激光器的特征温度T0=57K,和1·55μmInGaAsP分布反馈激光器的特征温度相当.1.6-1.7μm highly strained InGaAs/InGaAsP distributed feedback lasers was grown and fabricated by low pressure mentalorganic chemical vapor deposition. High quality highly strained InGaAs/InP materials were obtained by using strain buffer layer. Four pairs of highly strained quantum wells were used in the devices and carrier blocking layer was used to improve the temperature characteristics of the devices. The uncoated 1.66μm and 1.74μm lasers with ridge wave guide 3μm wide have low threshold current （ 〈 15mA） and high output power （ 〉 14mW at 100mA）. In the temperature range from 10℃ to 40℃, the characteristic temperature To of the 1.74μm laser is 57K, which is comparable to that of the 1.55μm-wavelength InGaAsP/InP-DFB laser.

关 键 词：MOCVD INGAAS/INGAASP 应变量子阱 分布反馈激光器 

分 类 号：TN248[电子电信—物理电子学]