用射频溅射法制备立方氮化硼薄膜  

Preparation of cubic boron nitride films by radio frequency sputtering

作　　者：田凌[1] 丁毅[1] 陈浩[2] 刘钧锴[2] 邓金祥[2] 贺德衍[1] 陈光华[2] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000 [2]北京工业大学教育部新型功能材料重点实验室,北京100022

出　　处：《物理学报》2006年第10期5441-5443,共3页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60376007)资助的课题.~~

摘　　要：利用射频溅射方法在n型Si(111)衬底上制备出立方相含量接近100%且粘附性较高的立方氮化硼(c-BN)薄膜.傅里叶变换红外谱(FTIR)的结果表明,基底负偏压对薄膜立方相含量和薄膜压应力有很大影响,另外,衬底的电阻率对c-BN生长和薄膜的压应力也有一定的影响.Cubic boron nitride （c-BN） thin films with approximate 100% cubic phase and lower compressive stress were prepared on n-Si（ 111 ） substrates by radio frequency sputtering . The infrared spectra showed that the negative substrate bias had important effect on the content of cubic phase and the compressive stress of films. In addition, a relatively higher substrate resistivity favored the c-BN formation and reduced the compressive stress.

关 键 词：立方氮化硼 射频溅射 压应力 基底负偏压 

分 类 号：O484.1[理学—固体物理]