用于氮化铝陶瓷基片的电子浆料  

Electronic Paste for Aluminium Nitride Ceramic Substrate

作　　者：高官明[1] 张晓民[1] 王小云[1] 任金玉[1] 

机构地区：[1]昆明贵金属研究所

出　　处：《电子元件与材料》1996年第5期41-45,共5页Electronic Components And Materials

基　　金：云南省科委应用基础研究基金

摘　　要：研制了用于ＡｌＮ陶瓷基片的导体银浆和电阻浆料。采用低ＰｂＯ含量晶化玻璃料配制银导体浆料，玻璃软化点４３０～４５０℃。电阻浆料采用ＰｂＯ（质量分数小于６％）的晶化玻璃料Ｂ、Ｃ、Ｄ三种，软化点分别为５２０℃、６９０℃、６１０℃。改变ＲｕＯ２与玻璃相的质量比，能控制电阻浆料的方阻值。质量比在５０比５０至１５比８５之间。加入添加剂ＭｎＯ２可改善电阻浆料的ＴＣＲ，阻值在２０Ω／□～１ＭΩ／□范围内，ＴＣＲ绝对值小于２００×１０－６／℃。Conductive silver paste and resistive paste used for AlN ceramic substrate are prepared. Conductive silver paste is prepared by using crystallized frit with low PbO content and softening point from 430 ℃ to 450 ℃. Resistive paste is prepared by using sorts B, C and D of crystallized frit with PbO mass portion less than 6 percent and softening points 520 ℃,690 ℃ and 610 ℃ respectively Square resistance of the resistive paste can be controlled by changing mass proportion between RuO 2 and glass phase in range from 50∶50 to 15∶85. The square resistance lies in range from 20 ohm/□ to 1 mega ohm/□. It's TCR can be improved by adding sdditive MnO 2 and is less than 200 ppm/℃

关 键 词：电子浆料 氮化铝陶瓷基片 混合集成电路 

分 类 号：TN604[电子电信—电路与系统] TN45