多晶硅薄膜残余应力在线测量技术  

Study on in-situ measurement of residual stress of polysilicon thin film

作　　者：李仁锋[1] 吴嘉丽[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《传感器与微系统》2006年第10期74-75,85,共3页Transducer and Microsystem Technologies

摘　　要：介绍了多晶硅薄膜中的残余应力对微结构性能的影响,分析了应力在线测量技术的必要性。说明了T型微检测结构的测试原理,并基于单T型结构设计出双T型检测结构。探讨了检测结构的制作工艺,加工出试验样片,用刻度显微镜测量出试验数据,推导出误差修正公式,结合M athCAD软件计算出应力值。在结论部分,指出了双T型检测结构能够提高测量精度,并给出了多晶硅薄膜残余应力在线测量技术的工艺实现方法。The effect of residual stress of polysilicon thin film upon microstructure is introduced, and the necessity on in-situ measurement of residual stress is analyzed. The principle of measurement of residual stress by T-shaped microstructure is stated. Based on single-T-shaped microstructures, double-T-shaped measurement microstructures are designed. The fabrication processing is discussed. The test chips are manufactured and measure data are gained with the scale microscope. The error modification formula is deduced, and the residual stress is calculated using MathCAD. It is pointed that double-T-shaped measurement microstructures can uprate measurement accuracy, and the manufacture implementation technique on in-situ measurement of residual stress in polysilicon thin film is given.

关 键 词：微电子机械系统 多晶硅 薄膜 残余应力 

分 类 号：TN304.07[电子电信—物理电子学]