SIMOX结构退化的卢瑟福背散射研究  

STUDY ON DEGENERATION OF SIMOX STRUCTURE BY RUTHERFORD BACKSCATTERING SPECTRUM

作　　者：蒋美萍[1] 李金华[1] 林成鲁[1] 

机构地区：[1]江苏石油化工学院功能材料实验室,中科院上海冶金所信息功能材料国家重点实验室

出　　处：《微细加工技术》1996年第3期25-30,共6页Microfabrication Technology

摘　　要：在高温外延气氛下，ＳＩＭＯＸ结构会被损伤、退化。本文用卢瑟福背散射技术分析了这种退化，指出这种退化主要是高温下氢对表层硅的反应剥蚀及氢经表层硅中穿透性位错使埋层ＳｉＯ２分解。SIMOX structure would be damaged and degenerated in general epitaxial ambient at high temperature. This degeneration of SIMOX was studied by Rotherford Backscattering analysis in this paper. The result shows that the structure degeneration mainly consists of reactive denudation of the top silicon layer and decomposition of the buried silicon oxide by bydrogen at high temperature.

关 键 词：SIMOX SOI结构 卢瑟福背散射 半导体材料 

分 类 号：TN303[电子电信—物理电子学]