基于EIT技术的微区薄层电阻无接触测试技术研究  

Research on the Technique of Determing the Resistivity of Micro Areas Sheet Resistivity Based on EIT

作　　者：谢辉[1] 高强[2] 刘新福[2] 

机构地区：[1]河北工业大学信息工程学院,300130 [2]河北工业大学机械学院,300130

出　　处：《河北工业大学学报》2006年第5期72-76,共5页Journal of Hebei University of Technology

摘　　要：论述了用无接触方法测试大型硅片电阻率均匀性的新方案.回顾了EIT技术的发展与成果,对其基本原理和重建算法在理论上进行了描述,提出可将其应用于微区薄层电阻测试,并就测试细节做了进一步探索,最后就其应用前景作了展望.这一技术与传统的四探针技术相比,不仅在理论上将有相同的分辨率,并且具有快速,不损坏硅片的特点.A new method is described for determining the distribution of resistivity of semiconductor wafers and thin conducting films without contact. ThispaperreviewsthedevelopmentandachivementofEIT, introduces the bastc theory of EIT, reconstruction algorithm and proposes that it can be applied to measure micro areas sheet resistivity. Then it introduces the detail of the measuremen. The technique offers resolution and accuracy comparable to four-point Probe me- thods and the wafer is not contaminated.

关 键 词：电阻抗断层成像技术 正问题 逆问题 四探针技术 薄层电阻 

分 类 号：TN307[电子电信—物理电子学]