基于共振隧穿二极管的GaAs基压力传感器研制  

A GaAs Pressure Sensor Based on Resonant Tunneling Diodes

作　　者：王建[1] 张文栋[1] 薛晨阳[1] 熊继军[1] 张斌珍[1] 仝召民[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《传感技术学报》2006年第05B期1844-1846,1851,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助(50405025;50375050)

摘　　要：为了突破传统的机电转换效应的宏观物理局限,为更高灵敏度、更低功耗的微/纳机电压力传感器的设计提供理论、工艺及实验依据,首次设计并利用微机械控制孔技术加工制作了基于AlAs/InxGa1-xAs/GaAs共振隧穿二极管(RTD)的GaAs基薄膜压力传感器,实现了RTD工艺与微机械加工技术的工艺集成.测试结果表明:该压力传感器的线性灵敏度达到0.1mV/kPa.In order to break through the macroscopically physical limitation of the traditional mechanical-electrical effect, provide the theory, process and experimental references for the design of higher sensitivity, lower power consumption pressure sensor, a GaAs Pressure sensor based on resonant tunneling diodes （AlAs/InxGa1-xAs/GaAs RTD） is designed and processed by the control hole technology firstly, and the process integration of RTD and micro-mechanical technology is implemented. The test results show that the linear sensitivity is up to 0.1 mV/kPa.

关 键 词：共振隧穿二极管 GAAS 压力传感器 控制孔工艺 

分 类 号：TN315[电子电信—物理电子学] TH812[机械工程—仪器科学与技术]