一个单芯片硅微惯性测量组合  

One Single Chip Micro Inertial Measurement Unit

作　　者：常洪龙[1] 蒋庆华[1] 崔金强[1] 李芊[1] 苑伟政[1] 杨芳[2] 

机构地区：[1]西北工业大学陕西省微/纳米系统重点实验室,西安710072 [2]北京大学微电子学院,北京100871

出　　处：《传感技术学报》2006年第05B期2245-2247,2251,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金资助(50505038)

摘　　要：论文基于普通的体硅工艺设计实现了一个单片集成式硅微惯性测量组合.通过对敏感表头的结构优化设计达到异构图形长和宽的较高一致度,从而有效降低刻蚀延迟效应(RIELag)对大面积结构深刻蚀造成的影响.所加工的样片在不到1cm2的硅片面积上同时包含了三个不同轴向的硅微加速度计和三个不同轴向的硅微陀螺,可对载体在笛卡尔坐标系内六个自由度上的运动分量进行测量.针对这六个片上惯性元器件,分别设计了相应的接口电路并进行了测试.测试表明其中的陀螺可达到1deg/s左右的精度,加速度计有33mV/gn的标度因子.论文研究表明这种单片集成式硅微惯性测量组合的实现方法工艺简单,可有效降低惯性测量组合的体积,同时具有进一步提高精度的潜力.This paper presented one single chip micro inertial measurement unit based on ordinary bulk micromachining process such as dissolved wafer process. The length and width of lateral gaps between the different structure patterns were adjusted to be as similar as possible through comprehensive optimization of the six sensing structures, thus the deep reactive ion etching lag effect could hardly affect the geometry of the structure. The sample chip integrated six inertial sensors, i.e. the X-axis, Y-axis and Z-axis accelerometers and gyroscopes, on one area which was smaller than 1 cm^2. The test results showed that the gyroscopes＇ bias stability could reach 1 degree per second and the accelerometers＇ scale factor was about 33 mV/gn. The study result of the paper proves the feasibility of the simple integration method, which could greatly reduce the size of inertial measure unit.

关 键 词：硅微惯性测量组合 单片集成 体硅工艺 硅微陀螺 硅微加速度计 

分 类 号：TP212.12[自动化与计算机技术—检测技术与自动化装置]