利用白光干涉原理测量MEMS深槽结构  

Measuring MEMS Deep-Trench Structures with White Light Interference

作　　者：薛晨阳[1] 孔繁华[1] 张文栋[1] 熊继军[1] 张斌珍[1] 郑丽娜[1] 

机构地区：[1]中北大学电子测试技术国家重点实验室,太原030051

出　　处：《传感技术学报》2006年第05A期1516-1518,1522,共4页Chinese Journal of Sensors and Actuators

基　　金：国家自然科学基金重点项目资助(50535030);电子测试技术国家重点实验室基金资助;山西省外国留学人员基金资助

摘　　要：利用白光干涉仪测量形貌,实现对MEMS深槽结构的几何尺寸和三维形貌的分析.实验采用样品为硅栅,测得沟槽的深度为89.78μm,沟槽宽度22.6μm,深宽比为4∶1,得到清晰的三维形貌图.经过对不同沟槽的测量发现,当槽结构的宽大于5μm时,经倾斜一定角度后,可以测得槽的三维形貌.Based on the theory of white light interference, the geometry dimension and the 3 D topography of MEMS deep-trench can be measured. The sample is the silicon bar. From the analyses the depth of the groove is 89.78μm, the width 22. 6 μm and the depth-to-width radio 4 ： 1, and also the 3 D topography is shown. When completed many measurements on different grooves, it is found that while the width of the groove is more than 5μm, 3 D topography can also be measured when leant some degrees.

关 键 词：白光干涉 MEMS 三维形貌测试 

分 类 号：TM93[电气工程—电力电子与电力传动]