多晶硅梁疲劳损坏特性的研究  

Research on the Fatigue Damage of a Polysilicon Beam

作　　者：余存江[1] 唐洁影[1] 恩云飞[2] 师谦[2] 

机构地区：[1]东南大学MEMS教育部重点实验室,南京210096 [2]信息产业部电子第五研究所可靠性研究分析中心,广州510610

出　　处：《传感技术学报》2006年第05A期1599-1601,1605,共4页Chinese Journal of Sensors and Actuators

基　　金：国防科技重点实验室基金资助项目;电子元器件可靠性物理及其应用技术国家级重点实验室项目(51433030105JW0601)

摘　　要：针对多晶硅的疲劳失效机理,人们已经提出了一些解释的模型.然而,到目前为止没有一种模型能够全面地阐述疲劳失效机理.本文旨在采用参量的渐变,如平均杨氏模量E,来反映MEMS多晶硅梁的疲劳.通过测试周期性载荷下双端固支梁结构的pull-in电压变化,确定杨氏模量E的变化,进而表征梁的疲劳失效状态.Many research works on the fatigue properties of a MEMS structure have been reported. Several models have been proposed to explain the phenomena and behaviors of the specimen during their fatigue damage. No reasonable model, however, can comprehensively explain the mechanism of the fatigue damage of polysilicon. This paper focuses on the method using gradually varying parameter, for instance the mean value of Young＇s Modulus E, to depict the accumulation of the fatigue damage of polysilicon. The pull-in voltage of a clamped-clamped polysilicon beam is an important performance during a beam runs at our desire. The voltage is measured to reflect the accumulation of fatigue damage.

关 键 词：多晶硅 疲劳 MEMS 梁 杨氏模量 

分 类 号：TN306[电子电信—物理电子学] TN307