128×1线列InGaAs短波红外焦平面的研究  

STUDY ON 128×1 ELEMENT LINEAR InGaAs SHORT WAVELENTH INFRARED FOCAL PLANE ARRAY

作　　者：吕衍秋[1] 徐运华[1] 韩冰[1] 孔令才[1] 亢勇[1] 庄春泉[1] 吴小利[1] 张永刚[2] 龚海梅[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室 [2]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《红外与毫米波学报》2006年第5期333-337,共5页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金重点资助项目(50632060);国防预研项目

摘　　要：报道了用分子束外延(MBE)方法生长的掺杂InGaAs吸收层PIN InP/InGaAs/InP双异质结外延材料,通过干法刻蚀和湿法腐蚀相结合制作台面、硫化和聚酰亚胺钝化、电极生长等工艺,制备了128×1台面正照射InGaAs探测器阵列.测试了器件的变温I-V、响应光谱和探测率,在278K时平均峰值探测率为1.03×1012cmHz1/2W-1.实现了128元InGaAs探测器阵列与CTIA结构L128读出电路相互连,经封装后,在室温(291K)时成功测出128元响应信号.焦平面响应的不均匀性为18.3%,并对不均匀性产生的原因进行了分析.Based on doped-InGaAs absorbing layer in MBE-grown p-InP/n-lnGaAs/n-InP double-heterostructure epitaxial materials, 128 × 1 front-illuminated mesa InGaAs detector arrays were made with the technics of mesa-making by dry and wet etching, passivation by sulfidation and polyimide, growth of electrode and so on. 1- V curves, response spectra and detectivity of the devices were measured. The mean peak detectivity of the detectors is 1.03 ×10^12 cmHz^1/2W^-1 at 278K. 128 element InGaAs detector arrays are connect with CTIA-structure L128 read out integrate circuits. The response signals of the 128 elements were successfully measured at room temperature （291K） after packaged. The ununiformity of response is 18.3% , and the reasons of the ununinformity are discussed.

关 键 词：探测器 焦平面 INGAAS 钝化 

分 类 号：TN21[电子电信—物理电子学]