热丝辅助MWECR-CVD法沉积氢化非晶硅薄膜研究  

INVESTIGATION OF DEPOSITION OF HYDROGENATED AMORPHOUS SILICON THIN FILM WITH HW-MWECR-CVD SYSTEM

作　　者：刘国汉[1] 丁毅[1] 朱秀红[2] 何斌[2] 陈光华[2] 贺德衍[1] 

机构地区：[1]兰州大学物理科学与技术学院 [2]北京工业大学新型功能材料教育部重点实验室,北京100022

出　　处：《太阳能学报》2006年第10期986-989,共4页Acta Energiae Solaris Sinica

基　　金：国家重点基础研究发展规划资助项目(G000028201);甘肃省自然科学基金项目(3ZS051-A25-052)

摘　　要：为了降低a-Si:H薄膜中的氢含量,提高其稳定性,在我们MWECR-CVD系统中引入了热丝装置,热丝对等离子体的热辐射使等离子体升温,既促进了气体的进一步分解和电离,获得较多的低氢原子基团,也减少了活性高硅烷聚合物的生成,从而使薄膜中的(SiH2)n的含量降低。同时,热丝对样品表面提供的热辐射和光辐射也可以进一步降低薄膜的氢含量。实验结果表明,用这种装置沉积的a-Si:H薄膜,氢含量可降低到4.5at%左右,稳定性明显增强,光敏性也有一定改善。A novel MWECR-CVD system with hot wire assisted has been developed to decreased the hydrogen concentration of a-Si ： H films and increased the stability. The main role of the hot wire is to increase the plasma temperature, promote the decomposition of reaction gas thereby to increase the low-hydrogen radicals and restrain the higher silicon reactive species which are critical to form （ SiH2 ）n. The radiation from the hot wire also increases the temperature of growing surface of the films, which strengthens the activation of the surface and enhances the diffusion of hydrogen atoms, so that the hydrogen concentration is decreased and the microstructure of the a-Si ： H films can be improved. The experiment resuits show that the hydrogen concentration of a-Si： H films by using this system can be reduced to about 4.5at%, and meanwhile, the stability is increased remarkably and the photosensitivity is improved.

关 键 词：电子回旋共振 等离子体增强化学气相沉积 氢化非晶硅薄膜 热丝 光致衰退效应 

分 类 号：O484[理学—固体物理]