适用于深亚微米NMOSFET ESD效应的非本地传输模型  

A deep sub-micrometer NMOSFET non-local transport model for ESD effect

作　　者：朱志炜[1] 郝跃[1] 张金凤[1] 方建平[1] 刘红侠[1] 

机构地区：[1]西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2006年第11期5878-5884,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60376024)资助的课题.~~

摘　　要：分析了深亚微米NMOSFET在ESD应力下的非本地传输特性,分析说明了速度过冲效应可以增大漏端电流,改变器件特性.NMOSFET能量弛豫时间与器件中该点的电场、载流子速度和载流子能量密切相关,从而不能再近似为一个常数.利用蒙特卡罗仿真方法得到电子能量弛豫时间和电子高场迁移率与电子能量的关系表达式,并使用上述模型进行了ESD器件仿真,与实验结果的对比显示,使用该能量弛豫时间模型和高场迁移率模型可以得到准确的器件I-V曲线.Non-local transport characteristics of the deep sub-micrometer NMOS device are studied under electro-static discharge （ESD） stress. The result obtained shows that velocity overshoot may increase the drain current and has a great impact on the device characteristics, and that the energy relaxation time is correlated closely with the electric field of some point in the device as well as the velocity and the energy of the carriers, thus constant value is not appropriate for this parameter. The energy relaxation time and the high field mobility as functions of the carrier energy are gained by Monte Carlo calculation, and then device simulation is performed with these parameter models. Comparing ESD simulation with experimental results shows that accurate result about the I-V characteristics can be gained by using the models of the energy relaxation time and the high field mobility.

关 键 词：静电放电 速度过冲 能量弛豫时间 

分 类 号：O472.4[理学—半导体物理]