RTD纳米薄层的精细控制及X射线双晶衍射测量  

Elaborate Control of RTD's Nanometer Thin Layers & DCXRD Analysis

作　　者：卜夏正[1] 武一宾[1] 商耀辉[1] 王建峰[1] 

机构地区：[1]中国电子科技集团公司第十三研究所专用集成电路国家级重点实验室,石家庄050051

出　　处：《微纳电子技术》2006年第11期508-511,519,共5页Micronanoelectronic Technology

摘　　要：在共振隧穿二极管(RTD)的MBE生长中,用双生长速率和束流调制技术实现了RTDnm级薄层的精细控制;用X射线双晶衍射仪扫描并分析了典型双势垒RTD样品的衍射摇摆曲线;用计算机对样品结构进行了动力学模拟分析。结果显示样品异质结界面和晶体质量良好,纳米薄膜的组分和厚度偏差分别控制在2%和3.5%之内,说明薄层的生长得到了精细控制。In the MBE growth of resonant tunneling diodes （RTD）, the elaborate control of the thin layers was achieved by new double growth rate and flux modulating technology. The results of double crystal X-ray diffraction measure of typical double barrier RTD material were given. The rocking curve was also analysed by dynamical simulation. The results given by DCXRD show perfect heterojunction interface and crystal quality. The windage of the thin layers＇ thickness and composition are less than 2% and 3.5% respectively, so the growth of nanometer thin layers of RTD is elaborately controlled.

关 键 词：共振隧穿二极管 纳米级薄层 精细控制 X射线双晶衍射 动力学模拟 

分 类 号：TN312.2[电子电信—物理电子学] TN304