ULSI电路层间SiO_2介质CMP工艺与抛光液  

Processes and Slurries in ULSI SiO_2,ILD CMP

作　　者：孙鸣[1] 刘玉岭[1] 贾英茜[1] 刘博[1] 刘长宇[1] 

机构地区：[1]河北工业大学微电子所,天津300130

出　　处：《微纳电子技术》2006年第11期549-552,共4页Micronanoelectronic Technology

摘　　要：阐明了化学机械抛光(CMP)工艺在集成电路制造中所发挥的关键作用,介绍了作为IC多层布线层间介质SiO2的化学机械抛光机理及其抛光液在化学机械抛光中扮演的重要角色,着重分析了影响SiO2介质化学机械抛光质量的主要因素并在此基础上提出CMP工艺的优化工艺条件以及今后SiO2介质CMP研究重点。It was demonstrated that the critical role of chemical mechanical planarization （CMP） played in the IC fabrication. Furthermore, described the CMP process fundamentals of interlevel dielectric （ILD） -silicon dioxide with IC multi-level connection in details and the effects of CMP slurry as well. Finally, stressed and analysed the factors mainly effecting silicon dioxide CMP quality and on the basis of analysed factors of above, put forward optimal process design and keystones of CMP process for the future.

关 键 词：化学机械抛光 SiO2介质 去除速率 

分 类 号：TN405.97[电子电信—微电子学与固体电子学] TN305.2