半绝缘InP的铁掺杂激活与电学补偿  

Activation of Fe Doping and Electrical Compensation in Semi-Insulating InP

作　　者：苗杉杉[1] 赵有文[2] 董志远[2] 邓爱红[1] 杨俊[1] 王博[1] 

机构地区：[1]四川大学物理学院应用物理系,成都610065 [2]中国科学院半导体研究所,北京100083

出　　处：《Journal of Semiconductors》2006年第11期1934-1939,共6页半导体学报（英文版）

摘　　要：比较了掺Fe和非掺退火半绝缘(SI)InP材料中Fe杂质的分布,掺杂激活机理以及Fe原子与点缺陷的相互作用.原生掺Fe SI-InP中Fe的替位激活主要通过填隙-跳跃机制,但Fe原子易在位错周围聚集,与空位形成复合体缺陷,占据填隙位等,从而降低Fe的激活效率.在FeP2气氛下退火非掺InP获得的SI-InP材料中,Fe原子的激活主要通过扩散过程的“踢出-替位”机制.退火前材料中存在的In空位使Fe原子通过扩散充分占据In位,同时抑制了材料中深能级缺陷的形成.因此,这种SI-InP材料的Fe激活效率高、电学性能好.The impurity distribution,doping activation mechanism,and interaction between Fe atoms and point defects in Fedoped and annealed undoped semi-insulating（SI） InP materials are compared. The substitution and activation of Fe occur mostly via an interstitial hopping mechanism in as-grown Fe-doped SI InP. However,Fe atoms aggregate around dislocations and form complex defects with vacancies. The concentration of Fe atoms at interstitial positions is very high, resulting in a low activation efficiency. The activation mechanism of Fe is a kick-out substitution process in SI material obtained by annealing undoped InP in an iron phosphide ambient. Fe atoms nearly completely occupy the indium lattice sites due to the indium vacancy in the material before annealing. The formation of deep level defects is suppressed in the annealing process. This resuits in high Fe activation efficiency and good electrical properties of the SI-InP material.

关 键 词：INP 铁激活 退火 半绝缘 

分 类 号：TN304.23[电子电信—物理电子学]