铂扩散快恢复二极管特性的研究  

Study on the Properties of FRD by Spin-on Platinum Diffusion

作　　者：孙树梅[1] 曾祥斌[1] 袁德成 蒋陆金 肖敏[1] 冯亚宁 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074 [2]上海美高森美半导体有限公司,上海210018

出　　处：《半导体技术》2006年第12期930-934,共5页Semiconductor Technology

摘　　要：描述了用直拉单晶(CZ)硅片采取铂液态源扩散的方法控制少子寿命,以达到减小快恢复二极管的反向恢复时间的目的。通过一系列的实验对铂扩散二极管的特性进行研究,分析了铂扩散二极管的反向恢复时间TRR、正向压降VF以及漏电流IR等参数之间的关系,并分析了反向恢复时间TRR的温度特性。得到TRR与VF之间的理想折衷:TRR为80～500ns,VF控制在0.9～1.3V。不但使TRR与VF的折衷有了较大的改善,而且在材料上采用了成本较低的直拉单晶硅片代替成本较高的外延片。分析了铂扩散温度和时间对反向恢复时间TRR和正向压降VF的影响,理论上解释了各主要参数之间相互影响的原因。The results of an experimental study dedicated to lifetime control in fast recovery diodes were prevented. The CZ wafer and spin-on platinum diffusion were used to control lifetime of minority carrier in order to reduce the reverse recovery time TRR of fast recovery diode. The properties of platinum diffusion diode were studied by a series of experiments. The main diode parameters of reverse recovery time TRR, forward voltage drop VF and leakage current IR （especially at high temperature） were comparatively analyzed. The temperature characteristics of reverse recovery time TRR were also analyzed.The excellent selections between TRR and VF （TRR is 80～500 ns, VF is 0.9～1.3 V ）were obtained using cheap CZ wafer intead of expensive epitaxial wafer. The realationship between platinum diffusion conditions and diode parameters were investigated. The reasons of influence between parameters of FRD were also explained in theory.

关 键 词：铂扩散 反向恢复时间 正向压降 漏电流 

分 类 号：TN313.5[电子电信—物理电子学] TN314.1