ZnCoO稀磁半导体的室温磁性  

Room-temperature ferromagnetism in Co-doped ZnO diluted magnetic semiconductor

作　　者：王漪[1] 孙雷[1] 韩德栋[1] 刘力锋[1] 康晋锋[1] 刘晓彦 张兴[1] 韩汝琦[1] 

机构地区：[1]北京大学微电子学研究所,北京100871

出　　处：《物理学报》2006年第12期6651-6655,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10234010;60506009)资助的课题.~~

摘　　要：采用固相反应法,将ZnO和Co2O3粉末按不同的成分配比混合,制备了稀磁半导体Zn1-xCoxO(x=0·02,0·06,0·10)材料.并使用H2气氛退火技术对样品进行了处理,得到了具有室温铁磁性的掺Co氧化锌稀磁半导体.利用全自动X射线衍射仪、X射线光电子能谱仪、高分辨透射电子显微镜和超导量子干涉器件磁强计对样品的结构、晶粒的尺寸、微观形貌以及磁性等进行了测量和标度.The room-temperature ferromagnetism （RTFM） of Co-doped zinc oxide arc reported in this paper. The Zn1-x Cox O （x = 0.02, 0.06, 0.10） specimens were synthesized by solid state reaction of the mixture of ZnO and Co2O3 powders. The specimens were then annealed in the hydrogenation ambience. The RTFM was found in the hydrogenated samples, and the hysteresis loops of the hydrogenated Co-doped ZnO samples were measured at 300 K by using the superconducting quantum interference device magnetometer. The samples were further measured by X-ray diffraction, X-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy.

关 键 词：稀磁半导体 氧化锌 掺杂 固相反应法 

分 类 号：O472.5[理学—半导体物理]