中频脉冲磁控溅射制备ZnO:Al透明导电薄膜  

Preparation of ZnO:Al Films by Mid-frequency Impulse Magnetron Sputtering

作　　者：黄宇[1] 孙建[2] 薛俊明[2] 马铁华[1] 熊强[3] 赵颖[2] 耿新华[2] 

机构地区：[1]中北大学电子工程系仪器科学与动态测试教育部重点实验室,山西太原030051 [2]南开大学光电子薄膜器件与技术研究所天津市重点实验室 [3]河北省信息产业厅唐山无线电管理分局,河北唐山063000

出　　处：《光电子．激光》2006年第12期1427-1431,共5页Journal of Optoelectronics·Laser

基　　金：国家"973"重点基础研究资助项目(G2000028202);天津市自然科学基金资助项目(043604911);天津市科技发展计划资助项目(06YFGX02100)

摘　　要：采用中频磁控溅射工艺，以2％的Al掺杂的Zn（纯度99．99％）金属材料为靶材制备平面及绒面透明导电ZnO：Al（ZAO）薄膜，系统研究了衬底温度、工作气压和溅射功率等对平面ZAO结构和光电特性的影响，并对湿法腐蚀制备绒面ZAO薄膜进行了介绍。获得了适合太阳电池的高性能薄膜，其电阻率为4．6×10^-4Ω·cm，载流子浓度为4．9×10^20cm^-3，霍尔迁移率为56cm^2／V·s，可见光范围内（400～800nm）的平均透过率大于85％。Using a Zn target with 2% Al,ZnO;Al（ZAO） thin films were deposited on glass substrate by mid-frequency magnetron sputtering. The effect of substrate temperature, argon pressure,and MF power on the electrical and optical properties of complanate ZAO films were investigated. And ZAO films with texture were achieved by wet-etching. ZnO films with high performance were obtained, which were suitable for thin film solar cells. The resistivity of the film is 4.6 × 10^-4Ω·cm,carrier concentration is 4.9×10^20 cm^-3 and Hall mobility is 56 cm^2/V · s. The average optical transmittance is over 85 % within visible light （400-800 nm）.

关 键 词：中频磁控溅射 ZnO:Al(ZAO)薄膜 衬底温度 

分 类 号：O484.1[理学—固体物理]