隧道再生四有源区大功率半导体激光器  

Tunnel Regeneration High-Power Semiconductor Laser with Four Active Regions

作　　者：李建军[1] 韩军[1] 邓军[1] 崔碧峰[1] 廉鹏[1] 邹德恕[1] 沈光地[1] 

机构地区：[1]北京工业大学北京光电子技术实验室,北京100022

出　　处：《光学学报》2006年第12期1819-1822,共4页Acta Optica Sinica

基　　金：国家973计划(G20000683-02);北京市优秀人才培养专项经费(67002013200303)资助课题。

摘　　要：利用隧道再生原理实现半导体激光器在低注入电流下的高光功率输出。通过传输矩阵法对隧道再生四有源区光耦合半导体激光器的模式特性进行了理论分析,指出器件的激射模式应为TE3,且存在最优的内限制层厚度。利用金属有机物化学气相沉积(MOCVD)外延法生长了内限制层厚度分别为0.3μm、0.5μm和0.7μm的器件。内限制层厚度等于0.5μm的器件的P-I特性最好,腔面未镀膜时,在2 A的注入电流下其光输出功率大于5 W,P/I斜率达2.74 W/A。结果表明,为了得到尽可能高的光输出功率,需要合理地设计隧道再生多有源区激光器的内限制层厚度。The principle of tunnel regeneration is used to raise the optical output power of semiconductor lasers at lower injected current. The optical modes are analyzed through the transfer matrix method for the tunnel regeneration semiconductor laser with four optical coupled active regions. It is shown that TE3 should be the lasing mode, and there exists an optimum thickness for the inner cladding layers. Devices with inner cladding layer thickness of 0.3 μm, 0.5 μm and 0.7 μm are epitaxiallly grown by metal organic chemical vapor deposition method （MOCVD）, respectively. The device with 0.5 μm inner cladding thickness exhibits the best P-I characteristics, the optical power exceeds 5 W under 2 A driving current without facet coating, and the slope efficiency reaches 2.74 W/A. The results show that the thickness of the inner cladding layers should be designed properly so that a higher optical output power can be obtained.

关 键 词：激光器 隧道结 金属有机物化学气相沉积 量子阱 

分 类 号：TN248.4[电子电信—物理电子学]