应变硅pMOS反型层中空穴迁移率k·p及蒙特卡罗模拟研究  

k·p and Monte Carlo Studies of Hole Mobility in Strained-Si pMOS Inversion Layers

作　　者：赵寄[1] 邹建平[1] 谭耀华[1] 余志平[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2006年第12期2144-2149,共6页半导体学报（英文版）

摘　　要：对应变硅pMOS反型层中的空穴迁移率进行了理论研究.使用应力相关的6能带k·p模型,自洽地求解垂直于沟道方向的一维薛定谔方程与泊松方程,获得反型层中二维空穴气的能带结构.采用蒙特卡罗方法对单轴压应力和双轴张应力情况下的空穴迁移率进行了模拟研究,得出了沟道迁移率随垂直于沟道电场变化的曲线,并与常规的非应变硅pMOS迁移率进行了比较.模拟结果显示:无论是单轴压应力还是双轴张应力,都使得空穴迁移率增大.当单轴压应力沿着[110]沟道时,迁移率增大的幅度最大,平均增幅可达到170%左右.Hole mobility in strained silicon pMOS inversion layers is investigated theoretically. Using a six-band stress-dependent k · p model,the subband structures of 2DHG in inversion layers are computed from a self-consistent solution＇to the onedimensional Schr6dinger and Poisson equations. The hole mobility dependence on the transverse electric field for both uniaxial compression and biaxial tension is studied with the Monte Carlo method and compared with the case of unstrained silicon, The simulation results show that both uniaxial compression and biaxial tension can enhance the hole mobility, Uniaxial compression along the [110] direction enhances the hole mobility much more than in any other crystalline orientation.

关 键 词：应变硅 迁移率 k·p方法 蒙特卡罗模拟 

分 类 号：TN432[电子电信—微电子学与固体电子学]