ZnO薄膜的制备和结构特性及应变  

Preparation,Structural and Strain Properties of ZnO Thin Films

作　　者：邓雷磊[1] 吴孙桃[2] 李 静[2] 

机构地区：[1]厦门大学物理系,福建厦门361005 [2]厦门大学萨本栋微机电研究中心,福建厦门361005

出　　处：《发光学报》2006年第6期922-926,共5页Chinese Journal of Luminescence

基　　金：国家"973"计划(2001CB610505; 2001CB610506; 2002CB211800; 2002CB211807);国家自然科学重点基金(90206039);福建省科技计划重点项目(2005H043);厦门大学科技创新项目(XMKJCX20051025)资助项目

摘　　要：在SiO2／Si衬底上面，利用射频磁控溅射方法，在不同的工艺条件下生长ZnO薄膜，然后进行热处理（600-1000℃退火）。研究了氩氧比和退火温度对薄膜结晶性能的影响。薄膜的表面结构和晶体特性通过扫描电子显微镜（SEM）、X射线衍射（XRD）来进行表征．结果表明：所制备的薄膜为多晶纤锌矿结构，具有垂直于衬底的c轴（002）方向的择优取向性。热处理可使ZnO（002）衍射峰相对强度增强，半峰全宽（FWHM）变小，即退火使c轴生长的薄膜取向性增强。未经退火的ZnO薄膜存在张应力，经过热处理后应力发生改变，最后变成压应力，并且随着退火温度的升高，压应力逐渐增大。ZnO has a wide band gap of 3.37 eV, low lasing power threshold for optical pumping at room temperature, and UV emission resulted from a large exciton binding energy of 60 meV, so it can be used as light emitting diodes （LED）, photodetectors, and short wave laser. To fabricate the devices, high quality ZnO thin films are often required, such as they should have good crystal properties with high c-axis orientation and low stress. Many researches have been done on the preparation of high quality ZnO films in recent years. In this paper, ZnO thin films were prepared by RF magnetron sputtering method on SiO2/Si substrate at different ratio of Ar/O2, and were annealed at different annealing temperatures to improve the films quality. The effects of the ratio of Ar/O2 and annealing treatment on the ZnO films properties were discussed. The crystal structures and surface morphologies of ZnO thin films were characterized by X-ray diffraction （XRD） and scanning electron microscopy （SEM）. The SEM results show that the grain size of the as-deposited films is about 40 nm, which grows up with the increase of the annealing temperature. The XRD results show that asdeposited films have dominant c-axis orientation and the quality of ZnO films is better when grown with the Ar/O2 gas ratio of 1 ： 1. After the annealing treatment, the position of ZnO （002） XRD peak shifts from 34.06° to 34.64°, and the intensity of the ZnO （002） peak pattern increases while the full width at half maximum （FWHM） of the ZnO （002） peak decreases, which demonstrates that the quality of the ZnO films was improved by annealing. The as-deposited ZnO film experiences the tensile stress along the c-axis orientation, while the compressive stress exits in the annealed ZnO films. When the annealing temperature rises up, the tensile stress along the c-axis orientation decreases, while the compressive stress increases; at the same time, the grain size of the films is increased. The reason of the stress variation was discussed, that i

关 键 词：ZNO薄膜 射频磁控溅射 X射线衍射 扫描电子显微镜 

分 类 号：O472.3[理学—半导体物理]