超高真空CVD选择性外延锗硅及其电学特性  

Electrical characteristics and selective growth of SiGe by ultrahigh vacuum chemical vapor deposition

作　　者：吴贵斌[1] 叶志镇[1] 赵星[1] 刘国军[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,浙江杭州310027

出　　处：《浙江大学学报（工学版）》2006年第12期2041-2043,2078,共4页Journal of Zhejiang University：Engineering Science

基　　金：国家科技部攀登计划资助项目(981101040);浙江省科技厅计划资助项目(991110535)

摘　　要：为了满足高性能的红外探测要求，以高品质硅基器件研制了选择性外延锗硅肖特基二极管．利用低温下锗硅材料在二氧化硅表面成核需要一定时间的特点，采用超高真空化学气相沉积（UHV-CVD）技术，550℃下，在硅光刻窗口处，选择性生长了锗硅外延层．由此技术生长的锗硅材料制作了硅基肖特基二极管原型器件，并研究了该二极管器件的电流一电压特性曲线．结果表明，与传统方法制备的非选择性外延锗硅肖特基二极管相比，该二极管器件可以避免在确定有源区后再经受高温处理，简化了器件制作工艺，该二极管反向漏电流低2～3个数量级，具有优良的器件电学特性．To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device. According to the delay in nucleation of SiGe on SiO2 surface at low temperature,an ultrahigh vacuum chemical vapor deposition（UHV-CVD） technique was adopted. Selective epitaxy growth of SiGe was performed at 550 ℃ on silicon windows of patterned wafers. Prototype devices of silicon based Schottky diode was fabricated using materials obtained by the technique, and the current-voltage curve of the diode device was investigated. Results show that compared with non-selective epitaxy Schottky diode of SiGe prepared by the traditional method, the proposed diode can avoid heat treatment after definitely pinpointing the sources, and that the fabrication process of the device is simplified. The reverse leakage current of the device is two or three orders of magnitude lower, and has excellent electrical characteristics.

关 键 词：超高真空化学气相沉积 选择性外延 锗硅 肖特基二极管 

分 类 号：TN304[电子电信—物理电子学]