LED阵列的设计和制作工艺研究  

Design and Fabrication of AlGaInP LED Array

作　　者：梁静秋[1] 李佳[1] 王维彪[1] 

机构地区：[1]中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春130033

出　　处：《液晶与显示》2006年第6期604-608,共5页Chinese Journal of Liquid Crystals and Displays

基　　金：吉林省科技发展计划项目(No.20030513)

摘　　要：根据Al GaInP外延片的结构特点设计了LED型微显示器件的主要结构。利用Markus-Christian Amann等人提出的模型对器件电流注入后的空间分布进行了简单的理论分析,总结出了像素元和上隔离沟槽的理想尺寸分别是16μm×16μm和2μm。简述了减薄GaAs衬底的作用,设计衬底电隔离沟槽宽度为5μm。采用湿法腐蚀工艺进行器件结构制备,利用不同的腐蚀剂对金属层、p-GaP层、Al GaInP层和n-GaAs衬底层进行腐蚀。实验结果表明,腐蚀后的沟槽形貌较好,其深度和宽度可以达到设计要求。A kin.d of micro-LED array is designed in this paper. This device is based on AlGaInP epitaxial wafer. The theoretical analysis of injection current distribution based on the model developed by Markus-Christian Amann etc. is presented. It is concluded that the ideal dimension of the pels and top isolation groove width are 16 μm×16 μm and 2 μm, respectively. It is necessary for this device to decrease the GaAs substrate thickness. And the bottom isolation groove width is designed as 5 μm. The structure of isolation is fabricated by wet etching using both isotropic and anisotropic solvent. The result of the experiment shows that the procedure of isolation fabrication is feasible.

关 键 词：发光二极管阵列 微显示器件 隔离沟槽 湿法腐蚀 

分 类 号：TN873.3[电子电信—信息与通信工程] TN312.8