磁控溅射法制备AlN薄膜的研究进展  

Recent Advances of AlN Films by Magnetron Sputtering Deposition

作　　者：宋秀峰[1] 韩艳春[1] 何洪[1] 沈源[1] 

机构地区：[1]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《山东陶瓷》2006年第6期20-23,共4页Shandong Ceramics

摘　　要：综述了各种沉积条件对磁控溅射技术生长氮化铝薄膜的微观结构,电学以及光学性能的影响。采用磁控溅射技术,可以选用在适当的条件下制备具有特定功能与结构优良的氮化铝薄膜。Reviewed were the effects of various deposition conditions on microstructural, electrical and optical properties of AlN films grown by magnetron sputtering deposition technology. AlN films with special function and excellent structure can be grown under proper conditions by magnetron sputtering.

关 键 词：氮化铝薄膜 磁控溅射 性能 

分 类 号：O614.31[理学—无机化学]