ICP刻蚀损伤对n-Ga N-Ni/Au肖特基接触特性的影响  

Influence of ICP Induced Damage in n-Type GaN on Ni/Au Schottky Contact Characteristics

作　　者：刘杰[1] 王冲[1] 冯倩[1] 张进诚[1] 郝跃[1] 杨艳[1] 龚欣[1] 

机构地区：[1]西安电子科技大学微电子研究所,西安710071

出　　处：《半导体技术》2007年第1期40-42,81,共4页Semiconductor Technology

基　　金：国家973计划项目(513270407);国家科技预研项目(41308060106);国家科技重点实验室基金项目(51433040105DZ0102);国家973重点基础研究发展计划(2002CB3119)

摘　　要：通过电流-电压法(I-V),电容-电压法(C-V)对n-GaN材料的ICP(感应耦合等离子体)刻蚀样品和未刻蚀样品上的肖特基势垒二极管的电学特性进行了分析。利用原子力显微镜(AFM)和扫描电镜(SEM)对刻蚀样品的表面形貌,以及退火前后肖特基接触金属的表面形貌变化进行了研究。试验表明,ICP刻蚀会在GaN表面引入损伤,形成电子陷阱能级从而引起肖特基二极管的势垒高度降低,理想因子增大,反向泄漏电流增大。刻蚀样品在400℃热退火可以恢复二极管的电特性,退火温度到600℃时二极管特性要好于未刻蚀的样品。ICP （inductively coupled plasma） induced traps in n-type GaN were studied from currentvoltage （I-V） characteristics and capacitance-voltage （C-V） for Schottky diodes fabricated on etched surfaces and reference surface. Changes in the surface morphology of n-type GaN were investigated using AFM and the metal surface morphology of reference and annealed samples were investigated using SEM. The result of the experiment indicate that the ICP induced electron trap may lead to the reduction of Schottky barrier height and increase of the reverse leakage current. Schottky characteristics are recovered after annealing at 400℃, and we can get a better Schottky characteristics after annealing at 600 ℃.

关 键 词：感应耦合等离子体 氮化镓 肖特基接触 刻蚀损伤 退火 

分 类 号：TN305.7[电子电信—物理电子学]