PECVD方法用于梯度薄膜材料的研究  

Study of Gradient Thin Film Material Produced by PECVD

作　　者：於伟峰[1] 张伟[1] 汤晓东 包宗明[1] 

机构地区：[1]复旦大学电子工程系

出　　处：《功能材料》1996年第6期530-533,共4页Journal of Functional Materials

基　　金：国家自然科学基金委员会材料与工程学部资助

摘　　要：本文研究了ＰＥＣＶＤ方法制备Ｓｉ－Ｏ－Ｎ系梯度薄膜材料，并运用计算机控制技术成功地制备了涂层折射率随膜深成正弦波形式连续变化的Ｒｕｇａｔｅ单通带滤波器样品。结果表明，采用ＰＥＣＶＤ方法可以制备性能上乘、结构复杂的梯度薄膜材料，ＰＥＣＶＤ方法在研究、开发高级光学涂层领域有着宽广的应用前景。Si O N system functionally gradient thin film is grown by plasma enhanced chemical vapour deposition(PECVD) controlled by computer,using SiH 4(15% diluted by N 2),N 2O and NH 3 as reactants.The properties of the gradient film,refractive index n and diposition rate G depend on the reactant ratio.The gradient silicon oxynitride has been used successfully for the fabrication of rugate filter which employs a sinusoidal refractive index depth profile.The results show that the way of PECVD has the practicability in fabricating gradient thin film.

关 键 词：PECVD 氮氧化硅 梯度薄膜 薄膜 

分 类 号：O484.4[理学—固体物理]