电泳沉积法制备MgO薄膜  

Preparation of MgO Films Grown by Electrophoretic Deposition Technique

作　　者：曹玉萍[1] 李玉国[1] 孙钦军[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《微纳电子技术》2007年第1期23-25,共3页Micronanoelectronic Technology

摘　　要：采用电泳沉积法(EPD)在Si(111)衬底上制备出了MgO薄膜。用X射线衍射(XRD)、傅里叶红外吸收(FTIR)谱、透射电镜(TEM)和扫描电镜(SEM)对样品的结构和形貌进行了分析。结果显示所得样品为立方MgO多晶薄膜。MgO thin films were prepared on Si （111） substrates by EPD technique. Measurement results by XRD, VI＇IR and XPS indicate that the polycrystalline MgO films with cubic structure can be successfully grown on the Si （111） substrates. The surface morphology of the as-prepared MgO films was examined by SEM and TEM.

关 键 词：MgO薄膜 SI衬底 电泳沉积 

分 类 号：O484.1[理学—固体物理]