精确的短沟MOSFET电路模型及参数提取  

An Accurate Short-channel MOSFET Modelling and Parameter Extraction

作　　者：王晓晖[1] 汤庭鳌[1] 

机构地区：[1]复旦大学电子工程系

出　　处：《固体电子学研究与进展》1996年第4期352-359,共8页Research & Progress of SSE

摘　　要：给出一套具有较高精度且同时适用于数字电路和模拟电路ＣＡＤ的短沟ＭＯＳ器件直流模型。该模型精确、高效，可移植到ＨＳＰＩＣＥ等通用线路分析软件中。结合解析和数值两种参数提取方法，文中采用局部优化参数提取法进行ＭＯＳ器件参数提取。优化算法采用单纯形直接搜索法。参数提取过程中考虑了输出电导的精确性。通过对１．２μｍＣＭＯＳ工艺ＮＭＯＳ器件的测试及参数提取，并进行模型计算，结果表明理论和实际值符合很好。An accurate MOSFET DC model which is suitable for digital and analog circuit CAD is presented in this paper. The model is directed towards satisfying key goals of VLSI circuit simulations, and is suitable and easy to be transplanted to the HSPICE circuit simulator. A fast and reliable approach to MOSFETparameter extraction is proposed, and the optimization method used here is simple direct search method. During the parameter extraction the accuracy of output conductance is considered. By testing and extracting the parameters of a set of NMOSdevices using 1. 2 pm CMOS process, the model results show a good agreement with the experimental data.

关 键 词：MOSFET模型 短沟 MOS 场效应晶体管 

分 类 号：TN386.1[电子电信—物理电子学]