耗尽型选择性掺杂异质结晶体管  

DEPLETION MODE SELECTIVE DOPED HETEROJUNCTION TRANSISTOR

作　　者：陈定钦[1] 张晓玲[1] 熊思强 高翠华[1] 周帆[1] 

机构地区：[1]中国科学院半导体所

出　　处：《电子科学学刊》1990年第1期100-102,共3页

摘　　要：设计和研制了耗尽型选择性掺杂异质结晶体管。外延选择性掺杂材料是由本所Fs-Ⅲ型分子束外延炉生长的。制作器件的材料在室温下,霍尔测量的电子迁移率为6500cm^2/v·s,二维薄层电子浓度n_s=9×10^(11)cm^2。在77K时μ_n=75000cm^2/v·s。测量了具有栅长1.2—1.5μm,栅宽2×180μm耗尽型异质结器件的直流特性和器件的跨导,室温下g_m=110～130ms/mm,而低温77K时,可达到200ms/mm。Depletion Model Selective doped heterojunction transistor is designed and fabricated. Epitaxial modulation loping material were grown by a home-made MBE system. The gate length and width for low noise depletion devices were 1.2-1.5μm and 2×l80μm re-specipely. The electron mobility of the material is typically 6500cm2/v.s at 300K and 75000 cm2/v.s at 77 K. The sheet electron concentration n, is 9×1011 cm-2. The transconductance of the depletion Mode levices is 100-130 ms/mm at room temperature. However at low temperature the transcosductance is 200 ms/mm.Its noise figure is above 2-3dB.

关 键 词：异质结晶体管 掺杂 MBE材料 晶体管 

分 类 号：TN325.3[电子电信—物理电子学]