高频溅射SiO_2膜掩蔽GaAs和AlGaAs/GaAs中Zn扩散的研究  

Study on Deposition of SiO_2 Films as a Mask for Zn Diffusion GaAs and AlGaAs by RF Sputtering

作　　者：王雷[1] 张培亮[1] 刘静[1] 王志忠 

机构地区：[1]清华大学无线电系

出　　处：《电子学报》1990年第4期122-124,共3页Acta Electronica Sinica

摘　　要：本文报导了在GaAs、AlGaAs表面上用高频溅射法制备SiO_2膜的淀积规律,特别对用SiO_2膜掩蔽GaAs、AlGaAs/GaAs中的Zn扩散进行了实验研究,结果证明用高频溅射制备SiO_2膜可以有效地掩蔽GaAs,AlGaAs/GaAs中的Zn扩散。The deposition of SiO2 films on GaAs and AlGaAs by RF sputtering is described in this paper. The properties of films such as etching rate, refractive index, hole density, IR absorption spectra and Auger electron spectra have been measured and analysed.It is found that the sputtered SiO2 film is effective as a mask for Zn diffusion in GaAs and AlGaAs/GaAs.

关 键 词：SIO2膜 溅射 GAAS GAAS/GAAS ZN 

分 类 号：TN305.92[电子电信—物理电子学]