离子注入MOS有效少子产生寿命空间分布的确定  

Evaluation of Spatial Distribution of the Effective Minority Generation Lifetime in Ion Implanted MOS Capacitors

作　　者：黄庆安[1] 吕世冀 

机构地区：[1]东南大学微电子中心

出　　处：《电子学报》1990年第5期65-69,共5页Acta Electronica Sinica

摘　　要：本文讨论了深耗尽MOS电容器的少子产生机构,提出测量有效少子产生寿命空间分布的方法。对低剂量注B的样品进行了测量,结果表明注入层比体内的有效少子产生寿命低,从Si-SiO_2界面到体内,有效少子产生寿命逐渐增大,最后到达注入离子没有穿透的体区,保持一常数。Minority generation mechanisms of deep depleted MOS capacitor are discussed in this paper. The method to evaluate spatial distribution of the effective minority generation lifetime is proposed. The sample of low dose (implanted B) is measured. It is shown that the effective generation lifetime is gradually increased from the interface to the interior and the lifetime is a constant in a region deeper than 0.8μm, where the implanted boron does not penetrate.

关 键 词：离子注入 MOS器件 少子寿命 分布 

分 类 号：TN305.3[电子电信—物理电子学]